Back to Search
Start Over
On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping
- Source :
- AIP Advances, Vol 3, Iss 8, Pp 082103-082103 (2013)
- Publication Year :
- 2013
- Publisher :
- AIP Publishing LLC, 2013.
-
Abstract
- The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects.
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 3
- Issue :
- 8
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.659624e712a844ab8909c4463e0ea37d
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.4817834