GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

MLA

A. Sandupatla, et al. “GaN Drift-Layer Thickness Effects in Vertical Schottky Barrier Diodes on Free-Standing HVPE GaN Substrates.” AIP Advances, vol. 9, no. 4, Apr. 2019. EBSCOhost, https://doi.org/10.1063/1.5087491.

APA

A. Sandupatla, S. Arulkumaran, G. I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda, & H. Amano. (2019). GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates. AIP Advances, 9(4). https://doi.org/10.1063/1.5087491

Chicago

A. Sandupatla, S. Arulkumaran, G. I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda, and H. Amano. 2019. “GaN Drift-Layer Thickness Effects in Vertical Schottky Barrier Diodes on Free-Standing HVPE GaN Substrates.” AIP Advances 9 (4). doi:10.1063/1.5087491.