Back to Search
Start Over
Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure
- Source :
- Micromachines, Vol 15, Iss 4, p 512 (2024)
- Publication Year :
- 2024
- Publisher :
- MDPI AG, 2024.
-
Abstract
- In this study, the electrical performance and bias stability of InSnO/a-InGaZnO (ITO/a-IGZO) heterojunction thin-film transistors (TFTs) are investigated. Compared to a-IGZO TFTs, the mobility (µFE) and bias stability of ITO/a-IGZO heterojunction TFTs are enhanced. The band alignment of the ITO/a-IGZO heterojunction is analyzed by using X-ray photoelectron spectroscopy (XPS). A conduction band offset (∆EC) of 0.5 eV is observed in the ITO/a-IGZO heterojunction, resulting in electron accumulation in the formed potential well. Meanwhile, the ∆EC of the ITO/a-IGZO heterojunction can be modulated by nitrogen doping ITO (ITON), which can affect the carrier confinement and transport properties at the ITO/a-IGZO heterojunction interface. Moreover, the carrier concentration distribution at the ITO/a-IGZO heterointerface is extracted by means of TCAD silvaco 2018 simulation, which is beneficial for enhancing the electrical performance of ITO/a-IGZO heterojunction TFTs.
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 15
- Issue :
- 4
- Database :
- Directory of Open Access Journals
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.6641f13d879d487e9b5460913ef64d5a
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/mi15040512