Back to Search
Start Over
Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure
- Source :
- ACS Omega, Vol 9, Iss 23, Pp 25277-25282 (2024)
- Publication Year :
- 2024
- Publisher :
- American Chemical Society, 2024.
Details
- Language :
- English
- ISSN :
- 24701343
- Volume :
- 9
- Issue :
- 23
- Database :
- Directory of Open Access Journals
- Journal :
- ACS Omega
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.68e3f8d44696408cb5568a40e9fe474a
- Document Type :
- article
- Full Text :
- https://doi.org/10.1021/acsomega.4c03082