Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions

We investigated the electrical junction properties of the layered Sb _2 Te _3 film formed on Si substrates. The current−voltage characteristics of the Sb _2 Te _3 / n -Si heterojunction showed an ohmic properties, whereas the Sb _2 Te _3 / p -Si heterojunction exhibited rectifying properties with a high barrier height of 0.77 eV. The capacitance−voltage characteristics of MOS capacitors with the Sb _2 Te _3 electrode indicated an effective work function of 4.44 eV for the Sb _2 Te _3 film. These findings suggest that the Sb _2 Te _3 /Si heterostructure possesses a low conduction band offset, as inferred from the temperature dependence of the current−voltage characteristics of the Sb _2 Te _3 / n -Si.