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Magneto-transport and electronic structures of BaZnBi2

Authors :
Yi-Yan Wang
Peng-Jie Guo
Qiao-He Yu
Sheng Xu
Kai Liu
Tian-Long Xia
Source :
New Journal of Physics, Vol 19, Iss 12, p 123044 (2017)
Publication Year :
2017
Publisher :
IOP Publishing, 2017.

Abstract

We report the magneto-transport properties and electronic structures of BaZnBi _2 . BaZnBi _2 is a quasi-two-dimensional material with metallic behavior. Transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov–de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combined with the trivial Berry phase extracted from the SdH oscillation, BaZnBi _2 is suggested as a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi _2 .

Details

Language :
English
ISSN :
13672630
Volume :
19
Issue :
12
Database :
Directory of Open Access Journals
Journal :
New Journal of Physics
Publication Type :
Academic Journal
Accession number :
edsdoj.703ee41e31f245148723deeb61f7d3f7
Document Type :
article
Full Text :
https://doi.org/10.1088/1367-2630/aa95e7