Cite
Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM
MLA
Minjae Sun, et al. “Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM.” Micromachines, vol. 13, no. 9, Sept. 2022, p. 1476. EBSCOhost, https://doi.org/10.3390/mi13091476.
APA
Minjae Sun, Hyoung Won Baac, & Changhwan Shin. (2022). Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM. Micromachines, 13(9), 1476. https://doi.org/10.3390/mi13091476
Chicago
Minjae Sun, Hyoung Won Baac, and Changhwan Shin. 2022. “Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM.” Micromachines 13 (9): 1476. doi:10.3390/mi13091476.