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Synthesis and resistivity of topological metal MoP nanostructures

Authors :
Hyeuk Jin Han
David Hynek
Zishan Wu
Lei Wang
Pengzi Liu
Joshua V. Pondick
Sajad Yazdani
John M. Woods
Milad Yarali
Yujun Xie
Hailiang Wang
Judy J. Cha
Source :
APL Materials, Vol 8, Iss 1, Pp 011103-011103-7 (2020)
Publication Year :
2020
Publisher :
AIP Publishing LLC, 2020.

Abstract

Due to the increased surface to volume ratios, topological nanomaterials can enhance contributions from the topological surface states in transport measurements, which is critical for device applications that exploit the topological properties. It is particularly important for topological semimetals in which bulk carriers are unavoidable to make them into nanostructures to reveal the nature of the topological surface states, such as the Fermi arcs or nodal lines. Here, we report the nanostructure synthesis of the recently discovered triple-point topological metal MoP by direct conversion of MoO3 nanostructures and study their transport properties. We observe that the initial size of the MoO3 templates critically determines the crystalline quality of the resulting MoP nanostructures: large MoO3 flakes lead to porous MoP flakes, while narrow MoO3 nanowires lead to MoP nanowires without pores. The size-dependent porosity observed in MoP nanostructures is attributed to the volume change during the conversion reaction and nanoscale confinement effects. For MoO3 nanowires with diameters less than 10 nm, the resulting MoP nanowires are single crystalline. The resistivity values of MoP nanostructures are higher than the reported values of MoP bulk crystals owing to the porous nature. However, despite the high porosity present in MoP flakes, the residual resistance ratio is ∼2 and the temperature-dependent resistivity curves do not show any strong surface or grain-boundary scattering. Demonstration of the facile synthesis of MoP nanostructures provides opportunities for careful investigations of the surface states in transport measurements and exploration of future electronic devices, including nanoscale interconnects.

Details

Language :
English
ISSN :
2166532X
Volume :
8
Issue :
1
Database :
Directory of Open Access Journals
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.77e1d15653384014b71fb57ddc45bc2b
Document Type :
article
Full Text :
https://doi.org/10.1063/1.5130159