A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO₂/Ge and Si-cap/Ge Gate Stack

MLA

Rui Gao, et al. “A Comparative Study of AC Positive Bias Temperature Instability of Germanium NMOSFETs With GeO₂/Ge and Si-Cap/Ge Gate Stack.” IEEE Journal of the Electron Devices Society, vol. 9, Jan. 2021, pp. 539–44. EBSCOhost, https://doi.org/10.1109/JEDS.2021.3078540.

APA

Rui Gao, Jigang Ma, Xiaoling Lin, Xiaowen Zhang, Yunfei En, Guoguang Lu, Yun Huang, Zhigang Ji, Hong Yang, Weidong Zhang, & Jianfu Zhang. (2021). A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO₂/Ge and Si-cap/Ge Gate Stack. IEEE Journal of the Electron Devices Society, 9, 539–544. https://doi.org/10.1109/JEDS.2021.3078540

Chicago

Rui Gao, Jigang Ma, Xiaoling Lin, Xiaowen Zhang, Yunfei En, Guoguang Lu, Yun Huang, et al. 2021. “A Comparative Study of AC Positive Bias Temperature Instability of Germanium NMOSFETs With GeO₂/Ge and Si-Cap/Ge Gate Stack.” IEEE Journal of the Electron Devices Society 9 (January): 539–44. doi:10.1109/JEDS.2021.3078540.