Back to Search Start Over

Structural features of chalcogenide glass SiTe: An ovonic threshold switching material

Authors :
Rongchuan Gu
Meng Xu
Run Yu
Chong Qiao
Cai-Zhuang Wang
Kai-Ming Ho
Songyou Wang
Xiangshui Miao
Ming Xu
Source :
APL Materials, Vol 9, Iss 8, Pp 081101-081101-7 (2021)
Publication Year :
2021
Publisher :
AIP Publishing LLC, 2021.

Abstract

The state-of-the-art phase-change memory is usually composed of ovonic threshold switching (OTS) material and ovonic memory switching (OMS) material for selective and data storage, respectively. OMS materials have been intensely studied, while the knowledge of the OTS mechanism is still inadequate. In this article, we have explored the local structure and electronic property of a simple OTS material, the amorphous (a-) SiTe, by first-principles calculations. The results reveal that most of the atoms in a-SiTe obey the ā€œ8-Nā€ rule in contrast to a-GeTe, a well-studied OMS material. 76.5% of Si-centered configurations are in the form of randomly distributed tetrahedral clusters, while Te-centered configurations are relatively disordered without notable conformation. Furthermore, a large number of fivefold rings are found in a-SiTe. All of these structural characteristics lead to the high stability of a-SiTe, prohibiting its crystallization. In addition, the p state of Te also contributes much to the mid-gap states, which may be relevant for OTS behavior. Our findings provide an in-depth understanding of the structural signature and electronic properties of a-SiTe, having important implications for the design and applications of OTS materials.

Details

Language :
English
ISSN :
2166532X
Volume :
9
Issue :
8
Database :
Directory of Open Access Journals
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.78bd2b6d357744cc8bdce2845277a7ed
Document Type :
article
Full Text :
https://doi.org/10.1063/5.0059845