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A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs

Authors :
Minghao Liu
Zixuan Sun
Haoran Lu
Cong Shen
Lining Zhang
Runsheng Wang
Ru Huang
Source :
Nanomaterials, Vol 13, Iss 9, p 1507 (2023)
Publication Year :
2023
Publisher :
MDPI AG, 2023.

Abstract

A coupling mechanism between flicker noise and hot carrier degradation (HCD) is revealed in this work. Predicting the flicker noise properties of fresh and aged devices is becoming essential for circuit designs, requiring an understanding of the fundamental noise behaviors. While certain models for fresh devices have been proposed, those for aged devices have not been reported yet because of the lack of a clear mechanism. The flicker noise of aged FinFETs is characterized based on the measure-stress-measure (MSM) method and analyzed from the device physics. It is found that both the mean and deviations of the noise power spectral density increase compared with the fresh counterparts. A coupling mechanism is proposed to explain the trap time constants, leading to the trap characterizations in their energy profiles. The amplitude and number of contributing traps are also changing and are dependent on the mode of HCD and determined by the position of the induced traps. A microscopic picture is developed from the perspective of trap coupling, reproducing well the measured noise of advanced nanoscale FinFETs. The finding is important for accurate flicker noise calculations and aging-aware circuit designs.

Details

Language :
English
ISSN :
20794991
Volume :
13
Issue :
9
Database :
Directory of Open Access Journals
Journal :
Nanomaterials
Publication Type :
Academic Journal
Accession number :
edsdoj.7bbda6e3c1e547c2834bbefcb4bde0ed
Document Type :
article
Full Text :
https://doi.org/10.3390/nano13091507