Cite
Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene
MLA
Jubin Nathawat, et al. “Signatures of Hot Carriers and Hot Phonons in the Re-Entrant Metallic and Semiconducting States of Moiré-Gapped Graphene.” Nature Communications, vol. 14, no. 1, Mar. 2023, pp. 1–11. EBSCOhost, https://doi.org/10.1038/s41467-023-37292-4.
APA
Jubin Nathawat, Ishiaka Mansaray, Kohei Sakanashi, Naoto Wada, Michael D. Randle, Shenchu Yin, Keke He, Nargess Arabchigavkani, Ripudaman Dixit, Bilal Barut, Miao Zhao, Harihara Ramamoorthy, Ratchanok Somphonsane, Gil-Ho Kim, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki, Jong E. Han, & Jonathan P. Bird. (2023). Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene. Nature Communications, 14(1), 1–11. https://doi.org/10.1038/s41467-023-37292-4
Chicago
Jubin Nathawat, Ishiaka Mansaray, Kohei Sakanashi, Naoto Wada, Michael D. Randle, Shenchu Yin, Keke He, et al. 2023. “Signatures of Hot Carriers and Hot Phonons in the Re-Entrant Metallic and Semiconducting States of Moiré-Gapped Graphene.” Nature Communications 14 (1): 1–11. doi:10.1038/s41467-023-37292-4.