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Preparation and performance of g-C3N4/CuS film as counter electrode for quantum dot sensitized solar cells
- Source :
- Processing and Application of Ceramics, Vol 16, Iss 2, Pp 167-174 (2022)
- Publication Year :
- 2022
- Publisher :
- University of Novi Sad, 2022.
-
Abstract
- In this work g-C3N4/CuS composite film was prepared by successive ion layer adsorption and reaction (SILAR) method and used as the counter electrode in quantum dot sensitized solar cell (QDSSCs). To configure the cell, CdSe and CdS quantum dots acted as sensitizers on the photoanode side, polysulphide was used as the electrolyte and copper sulphide was deposited into the g-C3N4 film structure on the counter electrode side. Scanning electron microscope and X-ray diffraction were used to characterize the morphology and structure of the electrode materials, respectively. The photovoltaic performance of the cell was analysed by a standard solar simulator. The results revealed that the photoelectric conversion efficiency of the cell reached 3.65% under condition of AM 1.5 and irradiation intensity of 100mW/cm2.
Details
- Language :
- English
- ISSN :
- 18206131 and 24061034
- Volume :
- 16
- Issue :
- 2
- Database :
- Directory of Open Access Journals
- Journal :
- Processing and Application of Ceramics
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.81995eeddf604d1991f9bf757eb89e03
- Document Type :
- article
- Full Text :
- https://doi.org/10.2298/PAC2202167C