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Macroscopic versus microscopic photovoltaic response of heterojunctions based on mechanochemically prepared nanopowders of kesterite and n-type semiconductors

Authors :
O.P. Dimitriev
D.O. Grynko
A.M. Fedoryak
T.P. Doroshenko
M. Kratzer
C. Teichert
Yu.V. Noskov
N.A. Ogurtsov
A.A. Pud
P. Balaz
M. Balaz
M. Tesinsky
Source :
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 4, Pp 418-423 (2017)
Publication Year :
2017
Publisher :
National Academy of Sciences of Ukraine. Institute of Semi conductor physics., 2017.

Abstract

Mechanochemically prepared nanopowder of selenium-free kesterite Cu2ZnSnS4 (CZTS) in combination with n-type semiconductors, i.e., CdS, ZnO and TiO2, was tested in planar and bulk-heterojunction solar cells. The samples have been studied by macroscopic current-voltage (I-V) measurements and Kelvin-probe atomic-force microscopy (KPFM). KPFM images taken under light illumination showed the distribution of the potential across the surface, with negative potential on the n-type semiconductor domains and positive potential on the CZTS domains, which indicated charge separation at the interface of the counterparts. The best result was found for the CdS-CZTS composition, which showed a potential difference between the domains up to 250 mV. These results were compared with the planar heterojunctions of CdS/CZTS and TiO2/CZTS, where CZTS nanopowder was pressed/deposited directly onto the surface of films of the corresponding n-type semiconductors. Again, I-V characteristics showed that cells based on CdS/CZTS heterojunctions have the best performance, with a photovoltage up to 200 mV and photocurrent densities up to 0.1 mA/cm2. However, the carrier generation was found to occur mainly in the CdS semiconductor, while CZTS showed no photo-response and served as the hole-transporting layer only. It is concluded that sensitization of the kesterite powder obtained by mechanochemical method is necessary to improve the performance of the corresponding solar cells.

Details

Language :
English
ISSN :
15608034 and 16056582
Volume :
20
Issue :
4
Database :
Directory of Open Access Journals
Journal :
Semiconductor Physics, Quantum Electronics & Optoelectronics
Publication Type :
Academic Journal
Accession number :
edsdoj.84b22e8e12240f1a6ad57284c9e4d33
Document Type :
article
Full Text :
https://doi.org/10.15407/spqeo20.04.418