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Light emission from color centers in phosphorus-doped diamond

Authors :
Sledz Florian
Flatae Assegid M.
Lagomarsino Stefano
Piccolomo Savino
Nicley Shannon S.
Haenen Ken
Rechenberg Robert
Becker Michael F.
Sciortino Silvio
Gelli Nicla
Giuntini Lorenzo
Speranza Giorgio
Agio Mario
Source :
EPJ Web of Conferences, Vol 266, p 09008 (2022)
Publication Year :
2022
Publisher :
EDP Sciences, 2022.

Abstract

Light emission from color centers in diamond is being extensively investigated for developing, among other quantum devices, single-photon sources operating at room temperature. By doping diamond with phosphorus, one obtains an n-type semiconductor, which can be exploited for the electrical excitation of color centers. Here, we discuss the optical properties of color centers in phosphorus-doped diamond, especially the silicon-vacancy center, presenting the single-photon emission characteristics and the temperature dependence aiming for electroluminescent single-photon emitting devices.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
2100014X
Volume :
266
Database :
Directory of Open Access Journals
Journal :
EPJ Web of Conferences
Publication Type :
Academic Journal
Accession number :
edsdoj.84f22bfe73e46a4ac077cd397a5661d
Document Type :
article
Full Text :
https://doi.org/10.1051/epjconf/202226609008