Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C

MLA

Qianqian Shi, et al. “Effect of Oxidation Temperature on Physical Properties of Polycrystalline β-Ga2O3 Grown by Thermal Oxidation of GaN in O2 Ambient from 900 to 1400 °C.” Journal of Materials Research and Technology, vol. 30, no. 2099–2109, May 2024, pp. 2099–109. EBSCOhost, https://doi.org/10.1016/j.jmrt.2024.03.215.

APA

Qianqian Shi, Sufen Wei, Feng Shi, Tao Chen, Mingjie Zhao, & Ming-kwei Lee. (2024). Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C. Journal of Materials Research and Technology, 30(2099–2109), 2099–2109. https://doi.org/10.1016/j.jmrt.2024.03.215

Chicago

Qianqian Shi, Sufen Wei, Feng Shi, Tao Chen, Mingjie Zhao, and Ming-kwei Lee. 2024. “Effect of Oxidation Temperature on Physical Properties of Polycrystalline β-Ga2O3 Grown by Thermal Oxidation of GaN in O2 Ambient from 900 to 1400 °C.” Journal of Materials Research and Technology 30 (2099–2109): 2099–2109. doi:10.1016/j.jmrt.2024.03.215.