Back to Search
Start Over
A triple-level cell charge trap flash memory device with CVD-grown MoS2
- Source :
- Results in Physics, Vol 38, Iss , Pp 105620- (2022)
- Publication Year :
- 2022
- Publisher :
- Elsevier, 2022.
-
Abstract
- This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-κ gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices show the long memory retention performance for each state, demonstrating the feasibility of a robust TLC CTF memory device based on a CVD grown 2D material.
- Subjects :
- MoS2
Charge trap flash
Triple-level cell
Physics
QC1-999
Subjects
Details
- Language :
- English
- ISSN :
- 22113797
- Volume :
- 38
- Issue :
- 105620-
- Database :
- Directory of Open Access Journals
- Journal :
- Results in Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.87d00fcd5a6b43e69466853590bfcd3c
- Document Type :
- article
- Full Text :
- https://doi.org/10.1016/j.rinp.2022.105620