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Si-enabled self-lubrication and wear resistance of CrCoNiSi medium-entropy alloy films

Authors :
Young Mok Kim
Tae Jin Jang
Wansu Song
Hyeon-Seok Do
Sang-Ho Oh
Gyeongbeom Lee
Joungwook Kim
Eunsoo Yang
Byeong-Joo Lee
Ho Jang
Seok Su Sohn
Source :
Journal of Materials Research and Technology, Vol 30, Iss , Pp 5429-5443 (2024)
Publication Year :
2024
Publisher :
Elsevier, 2024.

Abstract

High- or medium-entropy alloys have gained attention in coatings attributed to high wear resistance, with the formation of an amorphous phase. However, tailoring the crystal structure has limitations in improving both friction and wear characteristics due to the uncertain influence of amorphization on friction coefficients. In this respect, Si, known to increase glass-forming ability, can reduce the friction coefficient as a self-lubricating tribo-film formed by tribochemical reactions. However, tailoring Si content also affects crystal structures, defects, and mechanical properties, which require systematical investigations. Therefore, in this study, CrCoNiSi alloy films are fabricated with controlling Si content (0–13 at%) and sputtering power (5.8–13.7 W/cm2). The increase in Si content and sputtering power both produce identical microstructural evolutions, shifting from a crystalline towards an amorphous phase. In an amorphous film of high sputtering power, the high SiO2 fraction leads to dominant adhesive wear with delamination, thus contributing to the increase in wear rate. However, the Si addition alters the Si ion fraction of post-wear, forming Si-induced tribo-film, retaining abrasive wear, and consequently reducing the friction coefficient and wear rate. This Si addition would offer control over crystal structure and self-lubricating properties, enabling tailored mechanical and tribological properties.

Details

Language :
English
ISSN :
22387854
Volume :
30
Issue :
5429-5443
Database :
Directory of Open Access Journals
Journal :
Journal of Materials Research and Technology
Publication Type :
Academic Journal
Accession number :
edsdoj.8bc3b2fcd42c9be0347ec80f32999
Document Type :
article
Full Text :
https://doi.org/10.1016/j.jmrt.2024.04.248