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Formation, Structure, Electronic, and Transport Properties of Nitrogen Defects in Graphene and Carbon Nanotubes

Authors :
Yoshitaka Fujimoto
Source :
Micromachines, Vol 15, Iss 9, p 1172 (2024)
Publication Year :
2024
Publisher :
MDPI AG, 2024.

Abstract

The substitutional doping of nitrogen is an efficient way to modulate the electronic properties of graphene and carbon nanotubes (CNTs). Therefore, it could enhance their physical and chemical properties as well as offer potential applications. This paper provides an overview of the experimental and theoretical investigations regarding nitrogen-doped graphene and CNTs. The formation of various nitrogen defects in nitrogen-doped graphene and CNTs, which are identified by several observations, is reviewed. The electronic properties and transport characteristics for nitrogen-doped graphene and CNTs are also reviewed for the development of high-performance electronic device applications.

Details

Language :
English
ISSN :
2072666X
Volume :
15
Issue :
9
Database :
Directory of Open Access Journals
Journal :
Micromachines
Publication Type :
Academic Journal
Accession number :
edsdoj.8c508cfb8dde4c459ae5844ab99a8ed8
Document Type :
article
Full Text :
https://doi.org/10.3390/mi15091172