The influence of excessive H2 during barrier growth on InGaN light-emitting diodes

MLA

Yangfeng Li, et al. “The Influence of Excessive H2 during Barrier Growth on InGaN Light-Emitting Diodes.” Materials Research Express, vol. 7, no. 10, Jan. 2020, p. 105907. EBSCOhost, https://doi.org/10.1088/2053-1591/abc18f.

APA

Yangfeng Li, Shen Yan, Die Junhui, Xiaotao Hu, Yimeng Song, Zhen Deng, Chunhua Du, Wenqi Wang, Ziguang Ma, Lu Wang, Haiqiang Jia, Wenxin Wang, Junming Zhou, Yang Jiang, & Hong Chen. (2020). The influence of excessive H2 during barrier growth on InGaN light-emitting diodes. Materials Research Express, 7(10), 105907. https://doi.org/10.1088/2053-1591/abc18f

Chicago

Yangfeng Li, Shen Yan, Die Junhui, Xiaotao Hu, Yimeng Song, Zhen Deng, Chunhua Du, et al. 2020. “The Influence of Excessive H2 during Barrier Growth on InGaN Light-Emitting Diodes.” Materials Research Express 7 (10): 105907. doi:10.1088/2053-1591/abc18f.