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A Review of Reliability in Gate-All-Around Nanosheet Devices
- Source :
- Micromachines, Vol 15, Iss 2, p 269 (2024)
- Publication Year :
- 2024
- Publisher :
- MDPI AG, 2024.
-
Abstract
- The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The introduction of a new device structure, coupled with aggressive pitch scaling, can give rise to reliability challenges. In this article, we present a review of the key reliability mechanisms in GAA NS FET, including bias temperature instability (BTI), hot carrier injection (HCI), gate oxide (Gox) time-dependent dielectric breakdown (TDDB), and middle-of-line (MOL) TDDB. We aim to not only underscore the unique reliability attributes inherent to NS architecture but also provide a holistic view of the status and prospects of NS reliability, taking into account the challenges posed by future scaling.
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 15
- Issue :
- 2
- Database :
- Directory of Open Access Journals
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.99ddbf7a63e04b9a8401c6d4728b0e5d
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/mi15020269