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Energy band correction due to one dimension tension in phosphorene

Authors :
Ali Izadparast
Peyman Sahebsara
Source :
Journal of Optoelectronical Nanostructures, Vol 2, Iss 1, Pp 59-68 (2017)
Publication Year :
2017
Publisher :
Islamic Azad University, Marvdasht Branch, 2017.

Abstract

Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we use the tight-binding Hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. Our results show that the energy gap decreases by decreasing / from 3 to 2, and finally the gap disappears.

Details

Language :
English
ISSN :
24237361 and 25382489
Volume :
2
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Journal of Optoelectronical Nanostructures
Publication Type :
Academic Journal
Accession number :
edsdoj.9e2a71065414096442e073281d067
Document Type :
article