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Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4

Authors :
Yaoxin Li
Yongchao Wang
Zichen Lian
Hao Li
Zhiting Gao
Liangcai Xu
Huan Wang
Rui’e Lu
Longfei Li
Yang Feng
Jinjiang Zhu
Liangyang Liu
Yongqian Wang
Bohan Fu
Shuai Yang
Luyi Yang
Yihua Wang
Tianlong Xia
Chang Liu
Shuang Jia
Yang Wu
Jinsong Zhang
Yayu Wang
Source :
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Publication Year :
2024
Publisher :
Nature Portfolio, 2024.

Abstract

Abstract The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

Subjects

Subjects :
Science

Details

Language :
English
ISSN :
20411723
Volume :
15
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
edsdoj.9ea2ca89544999b1aa9815891d5507
Document Type :
article
Full Text :
https://doi.org/10.1038/s41467-024-47779-3