Feasibility study of analogue filters based on memristor

Abstract This paper reports the critical parameters in fitting the Al:HfO2 memristor and exploits the memristor symbol derived from this fitting to design filter circuits. Memristor‐based filters can obtain at least two different filter ranges with the same filtering effect as conventional filters. Multistate resistance can be achieved by controlling the filamentary gap; adjusting the initial gap in the high resistance state from 1 to 0.1 nm could vary the cut‐off frequency of the filters from 230 MHz to 1.54 GHz. Memristor‐based band‐pass filter is also simulated by cascading a low‐pass filter and a high‐pass filter; the results show that a cut‐off frequency of 5.46 to 22.22 GHz can be tuned by adjusting the initial gap of a low resistance state from 0.4 nm down to 0.2 nm. Replacing the resistor in a conventional filter with a memristor allows the filter to have a variable range; this would solve the limitation where the conventional analogue filters have only a single filter range due to the fixed values of their constituent elements.