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The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure

Authors :
Fangzhou Du
Yang Jiang
Zhanxia Wu
Honghao Lu
Jiaqi He
Chuying Tang
Qiaoyu Hu
Kangyao Wen
Xinyi Tang
Haimin Hong
Hongyu Yu
Qing Wang
Source :
Crystals, Vol 12, Iss 5, p 722 (2022)
Publication Year :
2022
Publisher :
MDPI AG, 2022.

Abstract

This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted, and 30 s O2 + 15 W BCl3 was chosen as the optimal recipe. The optimal ALE approach exhibited satisfactory etching results, with regard to the etch-stop effect, compared with other techniques. The atomic force microscopy (AFM) results showed an etching per cycle (EPC) value of 0.15 nm/cycle, with a 0.996 fit coefficient and root mean square (RMS) surface roughness of around 0.61 nm (0.71 nm for as-grown sample), which was the lowest in comparison with digital etching (0.69 nm), Cl2/BCl3 continuous etching (0.91 nm) and BCl3 continuous etching (0.89 nm). X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy with energy dispersive X-ray spectroscopy measurements (STEM/EDS) verified the indium clustered phenomena at the bottom apex of V-pit defects in the epi structure of InAlN/GaN high electron mobility transistors (HEMTs) for the first time, in addition to the surface morphology optimization for the ALE under-etching technique used in this work. The resistor hall effect (Hall) and AFM measurements demonstrated that after 4 or 5 ALE cycles, the two-dimensional electron gas (2-DEG) density and RMS roughness were improved by 15% and 11.4%, respectively, while the sheet resistance (Rsh) was reduced by 6.7%, suggesting a good surface treatment function. These findings were important for realizing high-performance InAlN/GaN HEMTs.

Details

Language :
English
ISSN :
20734352
Volume :
12
Issue :
5
Database :
Directory of Open Access Journals
Journal :
Crystals
Publication Type :
Academic Journal
Accession number :
edsdoj.b16673bbe3bc482d94d0a8c647973914
Document Type :
article
Full Text :
https://doi.org/10.3390/cryst12050722