Back to Search
Start Over
Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors
- Source :
- IEEE Journal of the Electron Devices Society, Vol 12, Pp 502-507 (2024)
- Publication Year :
- 2024
- Publisher :
- IEEE, 2024.
-
Abstract
- Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a threshold voltages ( $V_{\mathrm {th}}$ ) closer to 0 V with almost no decline in mobility. In particular, the positive/negative bias stress threshold shift of N-doped a-IGTO TFTs is substantially reduced in both dark and light environment. The X-ray photoelectron spectroscopy analysis (XPS) and low frequency noise (LFN) are employed to study the mechanism of N-doping in a-IGTO TFTs. The XPS results indicate that appropriate amount of N-doping could enhance the bias stress stability and control the $V_{\mathrm {th}}$ efficiently by passivating the defects such as oxygen vacancy in a-IGTO films. The LFN results illustrate that the average interfacial trap density could be reduced by N-doping. Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays.
Details
- Language :
- English
- ISSN :
- 21686734
- Volume :
- 12
- Database :
- Directory of Open Access Journals
- Journal :
- IEEE Journal of the Electron Devices Society
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.b217a3f1a584abe87876197bfa4b30b
- Document Type :
- article
- Full Text :
- https://doi.org/10.1109/JEDS.2024.3424545