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Excitonic and electronic transitions in Me–Sb2Se3 structures

Authors :
Nicolae N. Syrbu
Victor V. Zalamai
Ivan G. Stamov
Stepan I. Beril
Source :
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 1045-1053 (2020)
Publication Year :
2020
Publisher :
Beilstein-Institut, 2020.

Abstract

The optical anisotropy of the Sb2Se3 crystals was investigated at 300 and 11 K. Excitonic features of four excitons (A, B, C, and D) were observed in the optical spectra of the Sb2Se3 single crystals and in the photoelectric spectra of the Me–Sb2Se3 structures. The exciton parameters, such as the ground (n = 1) and excited (n = 2) state positions and the binding energy (Ry), were determined. The effective mass of the electrons at the bottom of the conduction band (mc* = 0.67m0) as well as the holes at the four top valence bands (mv1* = 3.32m0, mv2* = 3.83m0, mv3* = 3.23m0 and mv4* = 3.23m0) were calculated in the Г-point of the Brillouin zone. The magnitude of the valence band splitting V1–V2 due to the spin–orbit interaction (Δso = 35 meV) and the crystal field (Δcf = 13 meV) were estimated in the Brillouin zone center. The energy splitting between the bands V3–V4 was 191 meV. The identified features were discussed based on both the theoretically calculated energy band structure and the excitonic band symmetry in the Brillouin zone (k = 0) for crystals with an orthorhombic symmetry (Рnma). The photoelectric properties of the Me–Sb2S3 structures were investigated in the spectral range 1–1.8 eV under E||c and E⟂c polarization conditions and at different applied voltages.

Details

Language :
English
ISSN :
21904286
Volume :
11
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Beilstein Journal of Nanotechnology
Publication Type :
Academic Journal
Accession number :
edsdoj.b2c709437c294bbcaa8efb58617da34a
Document Type :
article
Full Text :
https://doi.org/10.3762/bjnano.11.89