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Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

Authors :
Kai-Huang Chen
Tsung-Ming Tsai
Chien-Min Cheng
Shou-Jen Huang
Kuan-Chang Chang
Shu-Ping Liang
Tai-Fa Young
Source :
Materials, Vol 11, Iss 1, p 43 (2017)
Publication Year :
2017
Publisher :
MDPI AG, 2017.

Abstract

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model.

Details

Language :
English
ISSN :
19961944
Volume :
11
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.b2d5fa1674c84ce68dbfba7705f5bc5e
Document Type :
article
Full Text :
https://doi.org/10.3390/ma11010043