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Influence of Parasitic Parameters on Dynamic Threshold Voltage Hysteresis of Silicon Carbide MOSFETs
- Source :
- CSEE Journal of Power and Energy Systems, Vol 9, Iss 6, Pp 2251-2262 (2023)
- Publication Year :
- 2023
- Publisher :
- China electric power research institute, 2023.
- Subjects :
- Technology
Physics
QC1-999
Subjects
Details
- Language :
- English
- ISSN :
- 20960042
- Volume :
- 9
- Issue :
- 6
- Database :
- Directory of Open Access Journals
- Journal :
- CSEE Journal of Power and Energy Systems
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.b4f80f45406b4a8f8a78801894863d64
- Document Type :
- article
- Full Text :
- https://doi.org/10.17775/CSEEJPES.2022.00480