Back to Search
Start Over
High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3/SrZrO3 heterostructures
- Source :
- APL Materials, Vol 7, Iss 4, Pp 041119-041119-5 (2019)
- Publication Year :
- 2019
- Publisher :
- AIP Publishing LLC, 2019.
-
Abstract
- By inserting a SrZrO3 buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO3 films. A room temperature mobility of 140 cm2 V−1s−1 is achieved for 25-nm-thick films without any postgrowth treatment. The density of threading dislocations is only 4.9 × 109 cm−2 for buffered films prepared on (110) TbScO3 substrates by pulsed laser deposition.
- Subjects :
- Biotechnology
TP248.13-248.65
Physics
QC1-999
Subjects
Details
- Language :
- English
- ISSN :
- 2166532X
- Volume :
- 7
- Issue :
- 4
- Database :
- Directory of Open Access Journals
- Journal :
- APL Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.b59ef7a8e4f4bd18ce1d7b9a34679b0
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.5094867