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High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3/SrZrO3 heterostructures

Authors :
Arnaud P. Nono Tchiomo
Wolfgang Braun
Bryan P. Doyle
Wilfried Sigle
Peter van Aken
Jochen Mannhart
Prosper Ngabonziza
Source :
APL Materials, Vol 7, Iss 4, Pp 041119-041119-5 (2019)
Publication Year :
2019
Publisher :
AIP Publishing LLC, 2019.

Abstract

By inserting a SrZrO3 buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO3 films. A room temperature mobility of 140 cm2 V−1s−1 is achieved for 25-nm-thick films without any postgrowth treatment. The density of threading dislocations is only 4.9 × 109 cm−2 for buffered films prepared on (110) TbScO3 substrates by pulsed laser deposition.

Details

Language :
English
ISSN :
2166532X
Volume :
7
Issue :
4
Database :
Directory of Open Access Journals
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.b59ef7a8e4f4bd18ce1d7b9a34679b0
Document Type :
article
Full Text :
https://doi.org/10.1063/1.5094867