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Spiral Waveguides on Germanium-on-Silicon Nitride Platform for Mid-IR Sensing Applications
- Source :
- IEEE Photonics Journal, Vol 10, Iss 3, Pp 1-7 (2018)
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- Spiral waveguides on a new germanium-on-silicon nitride (GON) platform with a wide transparency and a large core-clad index contrast for mid-infrared (mid-IR) sensing applications are demonstrated. Spiral waveguide sensors with a low bending loss on this platform enable compact sensors for mid-IR absorption spectroscopy. A minimum volumetric concentration of 5% isopropanol (IPA) in an IPA-acetone mixture is measured. This detection limit is three times lower than the counterpart waveguide, fabricated on the regular germanium-on-silicon platform with similar propagation loss at 3.73 μm wavelength. This silicon-compatible GON sensor is promising for applications such as environmental studies, industrial leak detection, process control, medical breath analysis, and many more.
Details
- Language :
- English
- ISSN :
- 19430655
- Volume :
- 10
- Issue :
- 3
- Database :
- Directory of Open Access Journals
- Journal :
- IEEE Photonics Journal
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.bb232b57952d40108d9c88849456ab29
- Document Type :
- article
- Full Text :
- https://doi.org/10.1109/JPHOT.2018.2829988