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Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes
- Source :
- Physical Review Accelerators and Beams, Vol 19, Iss 10, p 103402 (2016)
- Publication Year :
- 2016
- Publisher :
- American Physical Society, 2016.
-
Abstract
- Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10 000 V ions. Moreover, the implantation damage with 10 000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. This result is consistent with enhanced ion channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.
- Subjects :
- Nuclear and particle physics. Atomic energy. Radioactivity
QC770-798
Subjects
Details
- Language :
- English
- ISSN :
- 24699888
- Volume :
- 19
- Issue :
- 10
- Database :
- Directory of Open Access Journals
- Journal :
- Physical Review Accelerators and Beams
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.bd7f9476d3d450aa9bfe12a9ec87b0a
- Document Type :
- article
- Full Text :
- https://doi.org/10.1103/PhysRevAccelBeams.19.103402