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A highly CMOS compatible hafnia-based ferroelectric diode
- Source :
- Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
- Publication Year :
- 2020
- Publisher :
- Nature Portfolio, 2020.
-
Abstract
- Designing reliable, scalable and high speed computing systems remains a challenge. Here, the authors identify noncentrosymmetric orthorhombic phase in HZO film and demonstrate a CMOS compatible 3D Vertical HZO-based ferroelectric diode array with self-selective property and 20 ns of speed operation.
- Subjects :
- Science
Subjects
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 11
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.f2f741492abf4ccca22fd4e425a534c9
- Document Type :
- article
- Full Text :
- https://doi.org/10.1038/s41467-020-15159-2