Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

MLA

Jongho Ji, et al. “Heterogeneous Integration of High-k Complex-Oxide Gate Dielectrics on Wide Band-Gap High-Electron-Mobility Transistors.” Communications Engineering, vol. 3, no. 1, Jan. 2024, pp. 1–7. EBSCOhost, https://doi.org/10.1038/s44172-024-00161-z.

APA

Jongho Ji, Jeong Yong Yang, Sangho Lee, Seokgi Kim, Min Jae Yeom, Gyuhyung Lee, Heechang Shin, Sang-Hoon Bae, Jong-Hyun Ahn, Sungkyu Kim, Jeehwan Kim, Geonwook Yoo, & Hyun S. Kum. (2024). Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors. Communications Engineering, 3(1), 1–7. https://doi.org/10.1038/s44172-024-00161-z

Chicago

Jongho Ji, Jeong Yong Yang, Sangho Lee, Seokgi Kim, Min Jae Yeom, Gyuhyung Lee, Heechang Shin, et al. 2024. “Heterogeneous Integration of High-k Complex-Oxide Gate Dielectrics on Wide Band-Gap High-Electron-Mobility Transistors.” Communications Engineering 3 (1): 1–7. doi:10.1038/s44172-024-00161-z.