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From Dopant to Host: Solution Synthesis and Light‐Emitting Applications of Organic‐Inorganic Lanthanide‐Based Metal Halides

Authors :
Tianxin Bai
Qiujie Wang
Yunfei Bai
Qichao Meng
Hongyuan Zhao
Ziying Wen
Haibo Sun
Li Huang
Junke Jiang
Dan Huang
Feng Liu
William W. Yu
Source :
Small Structures, Vol 5, Iss 7, Pp n/a-n/a (2024)
Publication Year :
2024
Publisher :
Wiley-VCH, 2024.

Abstract

The rich and unique energy level structure arising from 4fn inner shell configuration of trivalent lanthanide ions (Ln3+) renders them highly attractive for light‐emitting applications. Currently, research primarily focuses on Ln3+ doping in either traditional garnets or the recently developed perovskite phosphors. However, there have been few reports on stable phosphors crystallized with pure lanthanide elements. Herein, a universal solution‐based route to eight Ln3+‐based metal halides from the organic‐inorganic A4LnX7 family is described, where A+ = 4,4‐difluoropiperidinium (DFPD+), Ln3+ = Nd3+, Eu3+, Ho3+, Sm3+, Tm3+, Tb3+, Yb3+, Er3+, and X− = Cl−, Br−. Visible photoluminescence (PL) is observed from Tb3+‐, Eu3+‐, Ho3+‐, and Sm3+‐based compounds with Tb and Eu compositions exhibiting high PL quantum yields of 90–100%; Nd3+‐, Tm3+‐, Yb3+‐, and Er3+‐based crystals show fascinating near‐infrared emission. Light‐emitting diodes (LEDs) fabricated with (DFPD)4TbCl7 yield characteristic emission of Tb3+, representing the first demonstration of electroluminescence from these organic‐inorganic Ln3+‐based metal halides. Moreover, these materials exhibit distinct excitation wavelength‐dependent emission after alloying with different Ln3+ ions, making them interesting for multicolor display and multilevel information encryption applications. It is foreseen that this study will open up the way to a possible design of robust optoelectronic devices based on lanthanide metal halides.

Details

Language :
English
ISSN :
26884062
Volume :
5
Issue :
7
Database :
Directory of Open Access Journals
Journal :
Small Structures
Publication Type :
Academic Journal
Accession number :
edsdoj.f4fa1055f8f844049dcf7c3842a4f21d
Document Type :
article
Full Text :
https://doi.org/10.1002/sstr.202400096