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Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control
- Source :
- Materials, Vol 13, Iss 22, p 5179 (2020)
- Publication Year :
- 2020
- Publisher :
- MDPI AG, 2020.
-
Abstract
- We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000 °C. The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.
- Subjects :
- silicon carbide nanowires
vapor-solid-liquid mechanism
oxide-assisted growth mechanism
photoluminescence
thermal stability
Technology
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Subjects
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 13
- Issue :
- 22
- Database :
- Directory of Open Access Journals
- Journal :
- Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.f5f53ab55dd4f8ca3f91c4e988b41ec
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/ma13225179