Cite
Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs
MLA
Michel Goffioul, et al. “Direct Extraction Techniques of Microwave Small-Signal Model and Technological Parameters for Sub-Quarter Micron SOI MOSFETs.” Journal of Telecommunications and Information Technology, no. 3–4, Dec. 2000. EBSCOhost, https://doi.org/10.26636/jtit.2000.3-4.27.
APA
Michel Goffioul, Danielle Vanhoenacker, & Jean-Pierre Raskin. (2000). Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs. Journal of Telecommunications and Information Technology, 3–4. https://doi.org/10.26636/jtit.2000.3-4.27
Chicago
Michel Goffioul, Danielle Vanhoenacker, and Jean-Pierre Raskin. 2000. “Direct Extraction Techniques of Microwave Small-Signal Model and Technological Parameters for Sub-Quarter Micron SOI MOSFETs.” Journal of Telecommunications and Information Technology, no. 3–4 (December). doi:10.26636/jtit.2000.3-4.27.