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InGaAs-OI Substrate Fabrication on a 300 mm Wafer

Authors :
Sebastien Sollier
Julie Widiez
Gweltaz Gaudin
Frederic Mazen
Thierry Baron
Mickail Martin
Marie-Christine Roure
Pascal Besson
Christophe Morales
Elodie Beche
Frank Fournel
Sylvie Favier
Amelie Salaun
Patrice Gergaud
Maryline Cordeau
Christellle Veytizou
Ludovic Ecarnot
Daniel Delprat
Ionut Radu
Thomas Signamarcheix
Source :
Journal of Low Power Electronics and Applications, Vol 6, Iss 4, p 19 (2016)
Publication Year :
2016
Publisher :
MDPI AG, 2016.

Abstract

In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB) and Smart CutTM technology. Three key process steps of the integration were therefore specifically developed and optimized. The first one was the epitaxial growing process, designed to reduce the surface roughness of the InGaAs film. Second, direct wafer bonding conditions were investigated and optimized to achieve non-defective bonding up to 600 °C. Finally, we adapted the splitting condition to detach the InGaAs layer according to epitaxial stack specifications. The paper presents the overall process flow that achieved InGaAs-OI, the required optimization, and the associated characterizations, namely atomic force microscopy (AFM), scanning acoustic microscopy (SAM), and HR-XRD, to insure the crystalline quality of the post transferred layer.

Details

Language :
English
ISSN :
20799268
Volume :
6
Issue :
4
Database :
Directory of Open Access Journals
Journal :
Journal of Low Power Electronics and Applications
Publication Type :
Academic Journal
Accession number :
edsdoj.ffe38044688c423db103fb20f61af151
Document Type :
article
Full Text :
https://doi.org/10.3390/jlpea6040019