Effect of tilt angle variations in a halo implant on [V.sub.th] values for 0.14-[micro]m CMOS devices

Sensitivity of critical transistor parameters to halo implant tilt angle for 0.14-[micro]m CMOS devices was investigated. [V.sub.th] sensitivity was found to be 3% per tilt degree. A tilt angle mismatch between two serial ion implanters used in manufacturing was detected by tracking [V.sub.th] performance for 0.14-[micro]m production lots. Even though individual implanters may be within tool specifications for tilt angle control ([+ or -]0.5[degrees] for our specific tool type), the relative mismatch could be as large as 1[degrees], and therefore, result in a [V.sub.th] mismatch of over 3% from nominal. The [V.sub.th] mismatch results are in qualitative agreement with simulation results using SUPREM and MEDICI software. Index Terms--CMOSFETs, halo implant, high tilt angle, ion implantation, SUPREM simulation.