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Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization
- Source :
- IEEE Transactions on Electron Devices. June, 2003, Vol. 50 Issue 6, p1467, 8 p.
- Publication Year :
- 2003
-
Abstract
- The growth mechanism of metal induced lateral crystallization (MILC) is examined and modeled.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 50
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.111090738