Back to Search Start Over

nanoMOS 2.5: a two-dimensional simulator for quantum transport in double-gate MOSFETs

Authors :
Ren, Zhibin
Venugopal, Ramesh
Goasguen, Sebastien
Datta, Supriyo
Lundstrom, Mark S.
Source :
IEEE Transactions on Electron Devices. Sept, 2003, Vol. 50 Issue 9, p1914, 12 p.
Publication Year :
2003

Abstract

A program to numerically simulate quantum transport in double gate metal oxide semi conductor field effect transistors (MOSFETs) is described. Along with the program, some examples of the use of nanoMOS for 10 nm double gate MOSFETs are presented.

Subjects

Subjects :
Simulation methods -- Analysis
Metal oxide semiconductor field effect transistors -- Analysis
Metal oxide semiconductor field effect transistors -- Structure
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
50
Issue :
9
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.121322735

Tools

Authors Abstract Subjects Details