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Increased hot-carrier effects using SiGe layers in vertical surrounding-gate MOSFETs

Authors :
Date, Celisa K.
Plummer, James D.
Source :
IEEE Transactions on Electron Devices. Dec, 2001, Vol. 48 Issue 12, p2690, 5 p.
Publication Year :
2001

Abstract

An additional means for tailoring current-voltage (I-V) characteristics by controlling physical effects inside the device is provided through the use of silicon germanium (SiGe) heterostructures in vertical surrounding-gate MOSFETs. Incorporation of an SiGe layer in the vertical MOSFET drain can modify hot-carrier characteristics via material dependent impact ionization coefficients.

Subjects

Subjects :
Semiconductor preparation -- Innovations
Metal oxide semiconductor field effect transistors -- Properties
Metal oxide semiconductor field effect transistors -- Design and construction
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
48
Issue :
12
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.121439009

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