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Multiple-gate SOI MOSFETs: device design guidelines
- Source :
- IEEE Transactions on Electron Devices. Dec, 2002, Vol. 49 Issue 12, p2222, 8 p.
- Publication Year :
- 2002
-
Abstract
- Computer simulations of various silicon-on-insulator (SOI) MOSFETs with double and triple-gate structures and gate-all-around devices are described. Result recommend Pi-gate device for future nanometer MOSFET applications.
- Subjects :
- Metal oxide semiconductor field effect transistors -- Analysis
Metal oxide semiconductor field effect transistors -- Structure
Metal oxide semiconductor field effect transistors -- Design and construction
Silicon-on-isolator -- Analysis
Silicon-on-isolator -- Structure
Silicon-on-isolator -- Design and construction
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 49
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.121499643