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Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI

Authors :
Knoch, J.
Lengeler, B.
Appenzeller, J.
Source :
IEEE Transactions on Electron Devices. July, 2002, Vol. 49 Issue 7, p1212, 7 p.
Publication Year :
2002

Abstract

By using nonequilibrium Green's function formalism a fully quantum mechanical simulation of an ultrashort channel is presented. The doping of source and drain plays an important role for ballistic MOSFETs.

Subjects

Subjects :
Metal oxide semiconductor field effect transistors -- Analysis
Metal oxide semiconductor field effect transistors -- Structure
Semiconductor doping -- Analysis
Silicon-on-isolator -- Analysis
Silicon-on-isolator -- Structure
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
49
Issue :
7
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.121514898

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