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The role of the mercury-Si Schottky-barrier height in pseudo-MOSFETs
- Source :
- IEEE Transactions on Electron Devices. July, 2004, Vol. 51 Issue 7, p1164, 5 p.
- Publication Year :
- 2004
-
Abstract
- The mercury-probe configuration, called the HgFET, is a version of the Pseudo-MOSFET and a recent innovation with the advantage of well-defined source and drain areas. It is highlighted that the HgFET characterization of SOI (silicon-on-insulator) wafers is very sensitive to the surface condition of the Si surface.
- Subjects :
- Metal oxide semiconductor field effect transistors -- Analysis
Metal oxide semiconductor field effect transistors -- Structure
Metal oxide semiconductor field effect transistors -- Innovations
Semiconductor-metal boundaries -- Analysis
Silicon-on-isolator -- Technology application
Technology application
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 51
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.122243392