Chemical origin of the yellow luminescence in GaN

A study was conducted, by using cathodoluminescence spectroscopy, to investigate the influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN. The results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers, and do not give rise to the yellow luminescence (YL) of GaN.