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Chemical origin of the yellow luminescence in GaN

Authors :
Kucheyev, S.O.
Toth, M.
Philips, M.R.
Williams, J.S.
Jagadish, C.
G. Li
Source :
Journal of Applied Physics. May 1, 2002, Vol. 91 Issue 9, 5867-5874
Publication Year :
2002

Abstract

A study was conducted, by using cathodoluminescence spectroscopy, to investigate the influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN. The results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers, and do not give rise to the yellow luminescence (YL) of GaN.

Details

Language :
English
ISSN :
00218979
Volume :
91
Issue :
9
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.122491006