InAs quantum-dot GaAs -based lasers grown on AlGaAsSb metamorphic buffers

Authors :: Xin, Y. -C.
Vaughn, L. G.
Dawson, L. R.
Stintz, A.
Lin, Y.
Lester, L. F.
Huffaker, D. L.
Source :: Journal of Applied Physics. August 1, 2003, Vol. 94 Issue 3, 2133-2135
Publication Year :: 2003
Abstract: A method that reduces the lattice mismatch between the InAs quantum dots (QDs) and their surrounding material to extend the GaAs based QD emission wavelength is proposed. The density and the ground state transition of the resulting QD ensemble are lined out.