Improvement of RCA transistor using RTA annealing after the formation of interfacial oxide

Authors :: Chun, Zhang L.
Yan, Jin Hai
Fei, Ye Hong
Zhi, Gao Yu
Jun, Ning Bao; Xian, Mo Bang
Source :: IEEE Transactions on Electron Devices. June, 2002, Vol. 49 Issue 6, p1075, 3 p.
Publication Year :: 2002
Abstract: A RCA transistor with double-polysilicon structure is developed, in which an ultra-thin interfacial oxide layer is deliberately produced between polysilicon and silicon emitter. Good stability of the ultra-thin oxide is obtained by using rapid thermal annealing (RTA) method after the formation of RCA oxide.

Subjects :: Bipolar transistors -- Electric properties
Circuit design -- Testing
Annealing -- Measurement
Circuit designer
Integrated circuit design
Business
Electronics
Electronics and electrical industries

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