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Kinetics study for the reactions of Si atoms with SiH4

Authors :
Koi, Makoto
Tonokura, Kenichi
Tezaki, Atsumu
Koshi, Mitsuo
Source :
Journal of Physical Chemistry A. June 19, 2003, Vol. 107 Issue 24, 4838-4842
Publication Year :
2003

Abstract

Rate constants for the reactions of Si (3P, 1D, 1S) atoms with SiH4 are obtained using a combined laser photolysis/laser induced fluorescence technique. The results of the density functional theory calculations show that the reaction of Si(3P) atoms with SiH4 proceeds via a loose transition state.

Details

Language :
English
ISSN :
10895639
Volume :
107
Issue :
24
Database :
Gale General OneFile
Journal :
Journal of Physical Chemistry A
Publication Type :
Academic Journal
Accession number :
edsgcl.123177533