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The origins of leaky characteristics of Schottky diodes on p-GaN

Authors :
Yu, L.S.
Jia, L.
Qiao, S.
Lua.S.S
Li, J.
Lin, J.Y.
Jiang, H.X.
Source :
IEEE Transactions on Electron Devices. Feb, 2003, Vol. 50 Issue 2, p292, 5 p.
Publication Year :
2003

Abstract

p-Type GaN is an important semiconducter material for optical and electronic devices. The samples did not show any electrical activities using Hall measurements, when the origins of leaky characteristics of Scottky barrier of pGaN grown by MOCVD are investigated.

Subjects

Subjects :
Diodes, Schottky-barrier -- Electric properties
Semiconductor device
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
50
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.123311129

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